www.vishay.com 294 document number 82147 rev. 1.7, 22-jan-07 TSOP7000 vishay semiconductors 16672 1 2 3 ir receiver for high data rate pcm at 455 khz description the TSOP7000 is a miniaturized receiver for infrared remote control and ir data transmission. pin diode and preamplifier are assembled on lead frame, the epoxy package is designed as ir filter. the demodulated output signal can directly be decoded by a microprocessor. the main benefit is the operation with high data rates and long distances. this component has not been qualified according to automotive specifications. features ? photo detector and preamplifier in one package ? internal bandfilter for pcm frequency ? internal shielding against electrical field disturbance ? ttl and cmos compatibility ? output active low ? small size package ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec special features ? data rate 20 kbit/s ? supply voltage 2.7 - 5.5 v ? short settling time after power on ? high envelope duty cycle can be received ? enhanced immunity against disturbance from energy saving lamps mechanical data pinning: 1 = out, 2 = gnd, 3 = v s block diagram application circuit 10 k 2 3 1 v s out demo- g n d pass agc inp u t pi n band d u lator control circ u it 16 8 41 c 1 = 4.7 f tsopxxxx out g n d circ u it c r 1 = 47 + v s g n d transmitte r w ith tshfxxxx v s r 1 +c 1 recommended to s u ppress po w er s u pply dist u r b ances. v o r 2 >= 1 k r 2 optional for impro v ed p u lse forming. 16 8 43 e3
TSOP7000 document number 82147 rev. 1.7, 22-jan-07 vishay semiconductors www.vishay.com 295 absolute maximum ratings t amb = 25 c, unless otherwise specified electrical and opti cal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit supply voltage pin 3 v s -0.3 to + 6.0 v voltage at output to supply pin 1 v s - v o -0.3 to (v s + 0.3) v supply current pin 3 i s 5ma output voltage pin 1 v o -0.3 to + 6.0 v output current pin 1 i o 15 ma junction temperature t j 100 c storage temperature range t stg - 25 to + 85 c operating temperature range t amb - 25 to + 85 c soldering temperature t 10 s, 1 mm from case t sd 260 c power consumption p tot 30 mw parameter test condition symbol min ty p. max unit supply current (pin 3) dark ambient i sd 2.0 2.7 ma e v = 40 klx, sunlight i sh 2.3 ma supply voltage (pin 3) v s 2.7 5 5.5 v transmission distance p = 870 nm, ir diode tshf5400, i f = 300 ma d max 20 m p = 950 nm, ir diode tsal6400, i f = 300 ma d max 12 m threshold irradiance p = 870 nm, optical test signal of fig. 1 e e min 0.8 1.5 mw/m 2 maximum irradiance optical test signal of fig. 1 e e max 30 w/m 2 output voltage low (pin 1) 1 k external pull up resistor v ql 100 mv output voltage high (pin 1) no external pull-up resistor v qh v s - 0.25 v bandpass filter quality q 10 out-pulse width tolerance optic al test signal of fig.1, 1.5 mw/m 2 e e 30 w/m 2 tpo - 15 + 5 + 15 s delay time of output pulse optical test signal of fig. 1, e e > 1.5 mw/m 2 t don 15 36 s receiver start up time valid data after power on t v 50 s falling time leading edge of output pulse t f 0.4 s rise time no external pull up resistor t r 12 s 1 k external pull up resistor t r 1.2 s directivity angle of half transmission distance ? 1/2 45 deg
www.vishay.com 296 document number 82147 rev. 1.7, 22-jan-07 TSOP7000 vishay semiconductors typical characteristics t amb = 25 c, unless otherwise specified figure 1. output function figure 2. output fucntion (mit jitter) figure 3. output pulse diagram (t don , t po ) e e v q v qh v ql optical test si g nal (f = 455 khz, 10 cycles/ bu rst) output si g nal of TSOP7000 t pi =22s t t don t po t f 16792 2.2 s t r 50 % 90 % 10 % t po =t pi 15 s >4 8 .6 s (min. d u ty cycle) t e e v o v oh v ol t optical test si g nal (ir diode tshf5400, p 8 70 nm, i f = 300 ma, f = 455 khz, 10 cycles/ bu rst) output si g nal of TSOP7000 j tdon t don t po jitter of leading edge jitter of o u tp u tp u lse w idth j tpo 16755 t pi =22 s t 0 5 10 15 20 25 30 35 0.1 e e - irradiance (m w /m2) 16790 don t , t - o u tp u t p u lse length (s) o u tp u t p u lse w idth - t po delay time - t don 1 10 100 1000 10000 100000 n = 10 cycles/ bu rst po figure 4. jitter of output pulse figure 5. frequency dependence of responsivity figure 6. sensitivity in bright ambient 0 5 10 15 20 25 30 0.1 e e - irradiance (m w /m2) 16791 j n = 10 cycles/ bu rst jitter - t don jitter - t po 1 10 100 1000 10000 100000 tdon, tpo j - jitter of o u tp u t p u lse (s) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 300 350 400 450 500 550 600 f - fre qu ency (khz) 16751 / e e min e rel e - responsiti v ity 0 2 4 6 8 10 12 14 0.01 0.10 1.00 10.00 100.00 e - dc irradiance ( w /m 2 ) 167 8 6 e min e - threshold irradiance (m w /m ) 2 correlation w ith am b ient light so u rces (dist u r b anceeffect): 10 w /m 2 = 1.4 klx (stand.ill u m.a,t = 2 8 55 k) 10 w /m 2 = 10 klx (daylight,t = 5900 k)
TSOP7000 document number 82147 rev. 1.7, 22-jan-07 vishay semiconductors www.vishay.com 297 figure 7. sensitivity vs. supply voltage figure 8. rel. sensitivity vs. burstlength figure 9. supply current vs. ambient temperature 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v s - s u pply v oltage ( v ) 167 8 7 sensiti v ity in dark am b ient e min e - threshold irradiance (m w /m ) 2 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 n -b u rstlength (carriercycles/ bu rst) 167 88 emin e - relati v e sensiti v ity 26 22 1 8 14 2 8 24 20 16 12 10 8 1.5 1.6 1.7 1. 8 1.9 2.0 2.1 2.2 2.3 5 15253545556575 8 5 t am b - am b ient temperat u re (c) 16754 i- s u pply c u rrent (ma) s v s = 5.5 v v s = 2.7 v - 5 - 15 - 25 figure 10. relative spectral sensitivity vs. wavelength figure 11. directivity 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 750 8 00 8 50 900 950 1000 1050 1100 1150 - w a v elength (nm) 167 8 9 s ( ) - relati v e spectral sensiti v ity rel 96 12223p2 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 8 0 1.0 0. 8 0.7 d rel - relati v e transmission distance
www.vishay.com 298 document number 82147 rev. 1.7, 22-jan-07 TSOP7000 vishay semiconductors recommendation for suitable data formats the circuit of the TSOP7000 is designed so that dis- turbance signals are identified and unwated output pulses due to noise or disturbances are avoided. a bandpass filter, an automatic gain control and an inte- grator stage is used to suppress such disturbances. the distinguishing marks between data signal and disturbance are carrier frequency, burst length and the envelope duty cycle. the data signal should fullf ill the following conditions: ? the carrier frequency should be close to 455 khz. ? the burstlength should be at least 22 s (10 cycles of the carrier signal) and shorter than 500 s. ? the separation time between two consecutive bursts should be at least 26 s. ? if the data bursts are longer than 500 s then the envelope duty cycle is limited to 25 % ? the duty cycle of the carrier signal (455 khz) may be between 50 % (1.1 s pulses) and 10 % (0.2 s pulses). the lower duty cycle may help to save bat- tery power. package dimensions in millimeters 16003
TSOP7000 document number 82147 rev. 1.7, 22-jan-07 vishay semiconductors www.vishay.com 299 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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